2017 Transparent and flexible resistive random access memory based on Al2O3 film with multilayer electrodes 본문 Author Myeong-Cheol Kim, Kyung Cheol Choi* Journal IEEE Transaction on Electron Devices Volume/Issue 64, 8 Year 2017 Status 3508-3510, August, Published Link https://doi.org/10.1109/TED.2017.2716831 399회 연결 목록 이전글Resistive switching characteristics of Al2O3 film for transparent nonvolatile memory 25.06.21 다음글Electro-thermal Annealing (ETA) Method for Recovery of Cyclic Bending Stress in Flexible a-IGZO TFTs 25.06.21