2016 A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C-V Characteristics in Exfoliated MoS2 FET 본문 Author Hagyoul Bae+, Choong-Ki Kim+, Seung-Bae Jeon, Gwang Hyuk Shin, Eung Taek Kim, Jeong-Gyu Song, Youngjun Journal Electron Device Letters Volume/Issue 37, 2 Year 2016 Status 231-233, February, Published Link https://doi.org/10.1109/LED.2015.2509473 477회 연결 목록 이전글Efficient Green Organic Light-Emitting Diodes by Plasmonic Silver Nanoparticles 25.06.21 다음글Abnormal Electrical Characteristics of Multi-layered MoS2 FETs Attributed to Bulk Traps 25.06.21