2016 Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors 본문 Author Eungtaek Kim+, Choong-Ki Kim+, Myung Keun Lee, Tewook Bang, Yang-Kyu Choi, Sang-Hee Ko Park*, Kyung Cheol Choi* Journal Applied Physics Letters Year 2016 Status May, Published Link https://doi.org/10.1063/1.4948765 547회 연결 목록 이전글Chitin Nanofiber Transparent Paper for Flexible Green Electronics 25.06.21 다음글Reliable thin-film encapsulation of flexible OLEDs and enhancing their bending characteristics through mechanical analysis 25.06.21