2017 Highly Stable 2D Material (2DM) Field-Effect-Transistors (FETs) with Wafer-Scale Multi-dyad Encapsulation 본문 Author Choong-Ki Kim+, Eun Gyo Jeong+, Eungtaek Kim, Jeong-Gyu Song, Youngjun Kim, Whang Je Woo, Myung Keun Lee, Hagyoul Bae, Seung-Bae Jeon, Hyungjun Kim, Kyung Cheol Choi*, Yang-Kyu Choi* Journal Nanotechnology Volume/Issue 28, 055203 Year Jan. 2017. 3.874 Status 3.874 Link https://doi.org/10.1088/1361-6528/aa5235 440회 연결 검색 목록 이전글Low-Resistive High-Work-Function Gate Electrode for Transparent a-IGZO TFTs 25.06.21