2017 Low-Resistive High-Work-Function Gate Electrode for Transparent a-IGZO TFTs 본문 Author Woo Jae Jang,Myung Keun Lee, Jinhan Yoo, Eungtaek Kim, Dae Young Yang,Junhong Park,Jeong Woo Park,Sang-Hee Ko Park,Kyung Cheol Choi* Journal IEEE Transaction on Electron Devices Volume/Issue 64, 1 Year 2017 Status 164-169, January, Published Link https://doi.org/10.1109/TED.2016.2631567 415회 연결 검색 목록 이전글Highly Luminescent Blue-emitting CdZnS/ZnS nanorods having Electric Field Induced Fluorescence Switching property 25.06.21 다음글Highly Stable 2D Material (2DM) Field-Effect-Transistors (FETs) with Wafer-Scale Multi-dyad Encapsulation 25.06.21