2017 Resistive switching characteristics of Al2O3 film for transparent nonvolatile memory 본문 Author Myeong-Cheol Kim, Kyung Cheol Choi* Journal IEEE Transaction on Nanotechnology Year 2017 Status September, Accepted Link https://doi.org/10.1109/TNANO.2017.2723421 377회 연결 검색 목록 이전글Functional Design of Highly Robust and Flexible Thin-Film Encapsulation Composed of Quasi-perfect Sublayers for Transparent, Flexible Displays 25.06.21 다음글Transparent and flexible resistive random access memory based on Al2O3 film with multilayer electrodes 25.06.21